Abstract
A systematic experimental investigation on an effect of oxygen content on the electroluminescence (EL) performance has been made on ZnS:TbOF EL devices prepared by electron-beam (EB) evaporation method. The results show that doping of oxygen with a high oxygen concentration of 3.5 mol% at 3 mol% Tb improves luminance. X-ray diffraction studies have identified an improvement in the phosphor layer crystallinity with increasing oxygen content. Through these experimental trials, it has been clarified that doping of oxygen is an effective method for an improvement in luminance on the EL devices prepared by EB evaporation method as well as those prepared by sputtering method.
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