Abstract
In the present paper, anticipated performance characteristics of various InP-based GaInNAs quantum-well (QW) active regions are determined with the aid of our comprehensive computer model for various sets of parameters (temperature, carrier concentration, QW thickness). It is evident from this analysis that the compressively strained InP-based Ga0.12In0.88N0.02As0.98/Ga0.275In0.725As0.6P0.4 QW structure may offer expected lasing emission. Its maximal optical gain of over 2150 cm−1 has been determined at room temperature for the wavelength of about 2815 nm for the QW thickness of 10 nm and the carrier concentration of 5×1018 cm−3. Therefore, the above InP-based QW structure may be successfully applied in compact semiconductor laser sources of the desired radiation of wavelengths longer at room temperature than even 2800 nm. Similar GaAs-based devices emit radiation of distinctly shorter wavelengths, whereas GaSb-based ones avail themselves of more expensive substrates as well as exhibit lower thermal conductivities and worse carrier confinements.
Highlights
The mid-infrared (3.0–5.5 μm) spectral range enjoys currently an increasing interest of laser designers because of its potential wide applications in a distant air monitoring, P
Possibility of designing long-wavelength (≥2.0 μm) InP-based quantum-well (QW) GaInNAs diode lasers is considered with the aid of the comprehensive computer simulation
This emission may be widely applied in a distant air monitoring, laser spectroscopy, medical diagnostics, thermovision measurements, and wireless optical communication, to name the most important areas of its application
Summary
There is a wide interest to replace in this application the GaSb-based lasers with the InP-based ones of well known, much simpler, and less expensive technology, provided that a proper active-region structure will be applied ensuring laser emission of the expected infrared wavelength range It may be accomplished using some of the diluted nitrides as, for example, InNAs, GaInNAs, and GaInNAsSb. It may be accomplished using some of the diluted nitrides as, for example, InNAs, GaInNAs, and GaInNAsSb They are very special materials, because contrary to most of known semiconductors, an increase in their nitride contents leads to reductions of both the lattice constant and the energy gap.
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