Abstract
Optimization of growth conditions allows us to grow mirror-like hexagonal ZnCdS layers and CdSSe/ZnCdS quantum well (QW) structures on CdS(0001) and ZnCdS(0001) substrates by MOVPE. ZnCdS epilayers with high cathodoluminescence (CL) intensity at room temperature (RT) have also been obtained. An intense QW emission line has been observed in CdS/ZnCdS QW structures. With increasing excitation intensity the line shifted to shorter wavelength, which is a manifestation of an internal piezoelectric effect. An additional short-wavelength line appears in low-temperature CL spectra of CdSSe/ZnCdS QW structures due to localization of charge carriers by nonuniformity of alloy composition or QW thickness.
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