Abstract
We propose an atomistic comprehensive model based on a lattice kinetic Monte Carlo approach to analyse the impact of in-plane uniaxial stress during solid phase epitaxial regrowth. We observed no influence of tensile stress on the regrowth kinetics. In contrast, compressive stress leads to (i) a reduction of the macroscopic regrowth velocity, (ii) an enhancement of the amorphous/crystalline interface roughness, and (iii) defective Si formation. Our observations are in good agreement with experimental data from the literature. Our atomistic approach also clarifies the interpretation of the interface morphological instability based on the kinetics of microscopic events.
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