Abstract
Solid phase epitaxial (SPE) regrowth from selectively As +-implantation-induced amorphous Si is studied. Regrowth dependence on substrate orientations (100) and (111) is clarified using cross-sectional transmission electron microscope (XTEM) analysis. Four gate materials are used: photoresist, poly-Si, silicon dioxide, and silicon nitride. The generation of gate or mask-edge defects strongly depends on the two-dimensional shapes of as-implanted amorphous regions under the gate edge. It depends little on gate materials. When tear-drop shaped or circular amorphous profiles form under the gate edge, defect generation strongly depends on substrate orientations and gate direction. The amorphous regrowth rate in the 〈100〉 direction has an essential role in completely inhibiting such defect formation just under the gate edge.
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