Abstract
The kick-out model for impurity diffusion in semiconductors is studied. The kick-out mechanism is thought to play an important role in a number of applications, including the diffusion of zinc and chromium in gallium arsenide. Asymptotic solutions are derived for both one- and two-dimensional surface source problems. In the one-dimensional case, a mechanism for the destruction of self-interstitials is also incorporated. The calculated diffusion profiles have shapes which are typical of diffusion systems in which the kick-out mechanism is believed to be active. For the two-dimensional problem, contours of constant impurity concentration are calculated and some are found to have the ‘bird's beak’ shape which is frequently observed in experiments.
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