An Assessment of the Bias Dependence of Displacement Damage Effects and Annealing in Silicon Charge Coupled Devices

Abstract

The dependence of displacement damage effects in silicon charge coupled devices on the bias conditions during proton irradiation has been assessed. The devices have been fully characterized for dark signal increase, charge transfer degradation and the generation of random telegraph signals. A 5 to 10% higher degradation rate for all these parameters has been seen when unbiased during irradiation, under conditions typically used for a proton irradiation campaign, compared with the case when operating the devices during the irradiation. Room temperature annealing has been investigated and shows a bias dependence for all parameters tested. A reverse annealing behavior of bulk dark signal and random telegraph signals following illumination is reported for the first time. Both the annealing and reverse annealing observations may, in part, be attributed to the behavior of the trivacancy.