Abstract
The influence of CdI2 treatment on characteristics of CdSe thin films is explored where thermally grown CdSe films are subsequently treated by CdI2 within temperature range 200 °C-400 °C. All the CdSe films are polycrystalline in nature having mixture of cubic and hexagonal phases where phase transformation from (111)C to (103)H is occurred at and above 300 °C. The energy band-gap is varied from 1.57 eV to 1.70 eV with treatment and two PL emission peaks are observed with a strong one at ∼ 675 nm associated with NBE luminescence. Hillock topographies are observed where grain size is ranged from 36 nm to 64 nm with treatment temperature.
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