Abstract
AbstractCu2SnS3 is a promising compound for use as an absorber layer in thin film solar cells because it is made up of low‐cost and abundant elements, and has a high optical absorption coefficient. However, the band gap energy of monoclinic Cu2SnS3 is less than the value required for absorber layers in single‐junction solar cells. On the other hand, the band gap energy of Cu2SiS3 was reported to be approximately 2.5 eV, which is sufficiently large for this purpose. Therefore, in the present study, an attempt was made to synthesize Cu2Six Sn1‐xS3, which is a solid solution between Cu2SnS3 and Cu2SiS3. In X‐ray diffraction patterns from the synthesized compounds, the diffraction peaks were found to shift to higher 2θ values with increasing x, indicating a decrease in the lattice constants. In addition, the estimated band gap energy increased from 0.85 to 2.56 eV with increasing x. Cu2Six Sn1‐xS3 is therefore a potential candidate for use as the absorber layer in thin film solar cells because its band gap energy can be adjusted simply by varying its composition. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
