Abstract
Memristors have been proposed to be used in a wide variety of applications ranging from neural networks to memory to digital logic. Like other electronic devices, memristors are also prone to process variations. We show that the effect of process induced variations in the thickness of the oxide layer of a memristor has a non-linear relationship with memristance. We analyze the effects of process variation on memristor-based threshold gates. We propose two algorithms to tolerate variations on memristance based on two different constraints. One is used to determine the memristance values for a given list of Boolean functions to tolerate a maximum amount of variation. The other is used to determine the list of Boolean functions that can tolerate a maximum amount of variation for given memristance values. Finally, we analyze the performance of memristor-based threshold gates to tolerate variations.
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