Abstract
An Approach to Model Optimization of Man-Ufacturing of Emitter-Coupled Logic
Highlights
Intensive development of electronic technique leads to increasing of performance of elements of integrated circuits ant to increasing of degree of their integration (p-n-junctions, bipolar and fieldeffect transistors, thyristors, ...) [1,2,3,4,5,6]
Increasing of the performance could be obtain by development of new and optimization of existing technological processes. Another way to increase the performance in determination of materials with higher speed of transport of charge carriers [710]
Another way to decrease the dimensions is doping of epitaxial layers of heterostructures by diffusion and ion implantation [14,15,16,17]
Summary
Intensive development of electronic technique leads to increasing of performance of elements of integrated circuits ant to increasing of degree of their integration (p-n-junctions, bipolar and fieldeffect transistors, thyristors, ...) [1,2,3,4,5,6]. The inhomogeneity leads to decreasing of dimensions of elements of integrated circuits due to Arrhenius law Another way to decrease the dimensions is doping of epitaxial layers of heterostructures by diffusion and ion implantation [14,15,16,17]. In this case it is practicably to optimize annealing of dopant and/or radiation defects [17,18,19,20,21,22,23,24]. Farther we consider annealing of dopant and/or radiation defects After finishing this annealing we consider two another epitaxial layers with appropriate sections (see Fig. 1). Main aim of the present paper is analysis of dynamics of redistribution of infused and implanted dopants and/or radiation defects during annealing
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