Abstract

Fixed abrasive polishing pad plays an important role in planarization of the surface of integrated circuit and semiconductor substrate. This paper reports a systematic approach for fabricating the pad using polyurethane, metal mold and layer-by-layer curing without binders. The pad surface with uniformly and orderly arranged convexities is undamaged during the fabrication process. Because of using prepolymer with hydrophobic groups, self-conditioning, stable polishing process and no water swelling are observed during the polishing process. The experimental results show the material removal rate is 72.972 nm/min and the polished surface roughness is 0.007 μm for SiC wafer. It builds a basis for high efficient preparation technology on hydrophobic fixed abrasive pad.

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