Abstract
This paper presents the effects of quantum confinements on the surface potential, threshold voltage, drain current, transconductance, and drain conductance of a Dual Material Double Gate Junctionless Field Effect Nanowire Transistor (DMDG-JLFENT). The carrier energy quantization on the threshold voltage of a DMDG-JLFENT is modeled, and subsequently, other parameters like drain current were analytically presented. The QME considered here is obtained under the quantum confinement condition for an ultra-thin channel, i.e., below 10 nm of Si thickness. The threshold voltage shift due to QME can be used as a quantum correction term for compact modeling of junctionless transistors. The analytical model proposed for surface potential, threshold voltage, drain current, transconductance, and drain conductance were verified by TCAD 3-D quantum simulation results which makes it suitable for SPICE compact modeling.
Highlights
As the IC industry moves toward very low dimensions of the order of 10 nm and below the need for alternate device structure are highly desirable
This paper presents the effects of quantum confinements on the surface potential, threshold voltage, drain current, transconductance, and drain conductance of a Dual Material Double Gate Junctionless Field Effect Nanowire Transistor (DMDG-JLFENT)
The analytical model proposed for surface potential, threshold voltage, drain current, transconductance, and drain conductance were verified by TCAD 3-D quantum simulation results which makes it suitable for SPICE compact modeling
Summary
As the IC industry moves toward very low dimensions of the order of 10 nm and below the need for alternate device structure are highly desirable. The quantum confinements models are available in literature for these structures [7,8,9] Even though this structure has many advantages the leakage current in the sub-threshold regime of Double Gate Junctionless Field Effect Transistors (DG JLFET) is considerably high. It flows through the center of the channel i.e., volume conduction occurs due to the low concentration of the depletion charge carriers [10][11]. The analytical model results were verified with that obtained from the 3-D GENIUS Visual TCAD quantum simulation, which shows the high accuracy of our model
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