Abstract
We describe an UHV apparatus for the investigation of in-situ grown thin films by thermal desorption spectrometry (TDS). In the design the demands imposed by TDS are combined with those imposed by ion-beam assisted deposition (IBAD). The films are deposited onto a substrate by electron-beam evaporation of the source material. A broad-beam ion source provides the low-energy ions (0.1–1.5 keV) which are used as probes for TDS and as active agents in the deposition process. The ion and atom fluxes can be controlled independently. The ion-to-atom arrival ratio will be in the range 0.01–1.0. We plan to study the effect of ion assistance in IBAD layers with the TDS technique.
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