Abstract
Due to the constant changes of the environment and load, the insulated-gate bipolar transistor (IGBT) module is subjected to a large amount of junction temperature (Tj) fluctuations, which often leads to damage to the bond wires. The monitoring parameters of IGBTs are often coupled with Tj, which increases the difficulty of monitoring IGBTs’ health status online. In this paper, based on the collector current (Ic) and collector-emitter on-state voltage (Vce_on) online monitoring circuit, an online monitoring method of IGBT bond wire aging against interference is proposed. First, the bond wire aging model is established, and the Vce_on is selected as the monitoring parameter. Secondly, taking a three-phase inverter circuit as an example, the Vce_on and Ic waveforms of the IGBT module are monitored in real time, and the process of online monitoring is introduced accordingly. Finally, the experimental results output by RT-LAB indicate that the method proposed in this paper can accurately identify the aging state of IGBT bond wires under different conditions.
Highlights
Compared with other power electronic devices, the insulated-gate bipolar transistor (IGBT) power module has many advantages, such as large input impedance, small driving power, a simple control circuit, small switching loss, and high working frequency, so it has been widely used in power converters [1,2]
On account of the different coefficients of thermal expansion (CTE) of the module materials, the thermal stress of the internal structure is uneven under temperature fluctuations, which eventually leads to damage to the bond wires and the solder layer [10,11,12]
IGBT bond wire aging monitoring is very necessary to improve the reliability of the converter, which is the focus of this paper
Summary
Compared with other power electronic devices, the insulated-gate bipolar transistor (IGBT) power module has many advantages, such as large input impedance, small driving power, a simple control circuit, small switching loss, and high working frequency, so it has been widely used in power converters [1,2]. The authors of [31] calculated the equivalent resistance at the bonding area based on the offline measurement of Vce_on and evaluated the health status of the independent IGBT module This method considers the influence of Tj, it belongs to the field of IGBT offline reliability evaluation and does not provide a solution for online monitoring under actual working conditions. The circuit cleverly utilizes the current flowing through the IGBT and the corresponding turn-on voltage drop during the IGBT working process, and it does not need to inject additional current into the circuit or modify the control signal to collect aging parameters It obtains the intersection collector current (Iint) such that Vce_on is not disturbed by Tj via the IGBT bond wire aging model and datasheet. Switching frequency (f sw) Output frequency (f ) IGBT module type IR type Thermostat type
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