An analytical symmetric double-gate SOI MOSFET model

Abstract

In this paper, we present a simple, complete and analytical drain current model for symmetic double-gate SOI MOSFETs. The model was developed using a quasi-two-dimensional Poisson's equation. The model, applicable to digital/analogue circuit simulation, contains the following advanced features: precise description of the sub-threshold, near threshold and above-threshold regions of operation by one single expression; single-piece drain current equation, smoothly continuous from the linear region to the saturation region, considering the source/drain resistance; inclusion of important short channel effects such as velocity saturation, drain-induced barrier lowering and channel length modulation; self-heating effect due to the low thermal conductivity of the buried oxide; impactionization of MOS devices; and the parasitic BJT effect associated with drain breakdown.