Abstract
An accurate analytical switching loss model for a SiC MOSFET and Schottky diode half-bridge for a wide operating range is proposed in this paper, which is based on nonlinear differential circuit equations including parasitics. In the model, nonlinear device characteristics are used, including the dynamic gate-drain capacitance and the transfer characteristics measured under real switching conditions. With the proposed model, the accuracy improvement by using measured characteristics instead of device data sheet information is analyzed. In addition, the impact of making different common assumptions/simplifications on the accuracy of switching loss models is evaluated.
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