Abstract
In this paper, an analytical model of the channel surface potential in the tunnel field effect transistors (TFETs) is established and verified. The dual-modulation effects in TFETs that the surface potential of the channel is alternatively controlled by the gate bias and drain bias in different operating regimes are emphasized and studied. The transition point corresponding to the switching between the two operating regimes is also analyzed quantitatively. For the first time, a closed-form analytical model of the surface potential in TFETs, including the impacts of both the gate voltage and drain voltage is proposed. Furthermore, a compact current model of the TFET-based on the derived surface potential expression is given. The model predicted tunneling current agree well with the TCAD simulation results in all operating regions of TFETs, which will be helpful for the circuit properties simulation of the TFET.
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