Abstract
In this paper, a novel device concept has been presented which integrates ferroelectric gate insulator on SiGe-On-insulator (SGOI) substrate. An analytical subthreshold current model for ferroelectric SGOI field effect transistor (FSGOIFET) has been developed by using 2D Poisson’s equation and Landau–Khalatnikov equation. The explicit expressions for threshold voltage and subthreshold current have been obtained by extending the electrostatic potential model. The other important device parameters such as drain induced barrier lowering, threshold voltage roll-off, subthreshold swing etc have been obtained to quantitatively study the performance of FSGOIFET at shorter channel length. The merits of ferroelectric gate insulator have been demonstrated by comparing all device characteristics of FSGOIFET with those obtained for SGOIFET. An excellent fit of analytical results with simulation results obtained from Silvaco ATLAS TCAD has corroborated the accuracy of the presented model.
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