Abstract
An analytical model of the VBE-dependence of current-splitting in CMOS-compatible lateral bipolar transistors
Published Version
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https://doi.org/10.1016/0038-1101(95)00022-l
Copy DOIJournal: Solid State Electronics | Publication Date: Aug 1, 1995 |
Citations: 4 |
An analytical model of the VBE-dependence of current-splitting in CMOS-compatible lateral bipolar transistors
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