Abstract

To analyze and design the detecting structure of electrostatic inductive electric field sensors, it is crucial to determine the capacitance. This study proposes a model for the theoretical analysis of the capacitance of the detecting structure of the electrostatic inductive electric field sensor. The aim is to achieve high calculation accuracy and deepen the fundamental understanding of high performance. Using Schwarz–Christoffel mapping, a reasonably simplified and approximative solution program is developed. The precision is comparable to that of a finite element solver. The calculation results exhibit good agreement with the simulation results from finite element analysis when various parameter ratios are used. Notably, the calculation results of the analytical model are verified by the measured data of a realistic electrostatic sensor. Using the analytical model, a parametric study of the detecting structure is conducted, leading to the determination of the final optimized, technically achievable device structures.

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