An analytical model for the lateral channel electric field in LDD structures

Abstract

An analytical model for the lateral channel electric field in lightly doped drain (LDD) MOSFETs is developed from a pseudo-two-dimensional analysis. The model gives a prediction of the channel field when the lightly doped region is both fully depleted and partially depleted. The normal field mobility degradation and variation of the saturation field E/sub sat/ with gate voltage have been taken into account in the model. The boundary conditions for determining the pinch-off point L/sub sat/ proposed in the model along with the normal field mobility degradation consideration make possible the prediction of the variation of the pinch-off with the gate bias and the maximum value of the electric field E/sub max/. The differences between this model, existing models, and two-dimensional numerical simulations are discussed. >