Abstract
An analysis of current crowding and source contact resistance in top-contact organic thin-film transistors (OTFTs) is described. The dependence of the effective source length, over which significant current flows, on device structural parameters is investigated using 2D numerical simulations and a transmission-line-based analytical model is proposed which offers insight into the simulation results. An analytical expression for source resistance is derived which predicts that source resistance should decrease with increase in field effect mobility and gate–source voltage, and increase with semiconductor and insulator film thicknesses in agreement with reported experimental results.
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