Abstract
On the basis of the physical picture obtained by a detailed two-dimensional numerical simulation, an analytical CAD (computer-aided design) model for an IGBT (insulated-gate bipolar transistor) is developed which has sufficient flexibility to account for the unique characteristics of IGBT operation, while still retaining a mathematically simple form with readily extractable model parameters. The static model has been implemented in the circuit simulator SPICE. A systematic method of DC model parameter extraction is developed based on the parameter optimization program TOPEX. A set of model parameters extracted for a n-channel 600-V, symmetric IGBT is shown. Good agreement has been obtained between the simulation results and measurements. >
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