Abstract
A semiempirical CAD (computer-aided design) model for power IGBTs (insulated-gate bipolar transistors) which is physically based and uses subcircuit representation is presented. The model has sufficient flexibility to account for the unique characteristics of IGBT operation, while still retaining a simple form with readily extractable model parameters. The model has been implemented into the ContecSPICE circuit simulator. A systematic way of determining model parameters has also been developed. A 500-V/20-A commercial IGBT (Motorola MGP20N50) is fully characterized to verify the validity of the model. Good agreement has been obtained between simulation and measurement for both DC and transient cases. >
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