Abstract
An analytical surface-potential-based drain current model of symmetric double-gate (sDG) MOSFETs is described as a SPICE compatible model in this paper. The continuous surface and central potentials from the accumulation to the strong inversion regions are solved from the 1-D Poisson’s equation in sDG MOSFETs. Furthermore, the drain current is derived from the charge sheet model as a function of the surface potential. Over a wide range of terminal voltages, doping concentrations, and device geometries, the surface potential calculation scheme and drain current model are verified by solving the 1-D Poisson’s equation based on the least square method and using the Silvaco Atlas simulation results and experimental data, respectively. Such a model can be adopted as a useful platform to develop the circuit simulator and provide the clear understanding of sDG MOSFET device physics.
Highlights
Silicon ICs have the strong demand for increasing dense so that the feature size of devices shrinks into the nanometer scale
Chiang et al.[15] developed an analytical threshold voltage model for the symmetric double-gate (sDG) MOSFETs which can be applied to circuit simulation due to its computational efficiency, but the drain current model is still required in the circuit simulation
Lo et al.[16] solved the nonlinear Poisson equation for sDG metal-oxidesemiconductor transistors to get the explicit solution of the surface potential, but they used the regional approach leading to the absence of the physical meaning and decrease of the computational accuracy in the transition between the different operational regions
Summary
Silicon ICs have the strong demand for increasing dense so that the feature size of devices shrinks into the nanometer scale. The further scaling leads to hard limits[1] for the device performance improvement due to the short channel effects (SCEs). It is necessary to develop a drain current compact model of symmetric double-gate (sDG) MOSFETs, in order to better exploit sDG MOSFET circuit design and simulation. Smoothing functions, especially in the transition between the different regions of the short-channel sDG MOSFETs. In this paper, we give solutions of the surface and central potential in a closed form without any smoothing functions, which are continuous from accumulation, subthreshold, to strong inversion regions. We formulate the drain current expression by using the charge sheet model[18] for the sDG MOSFETs. we give the important attention on the high accuracy and fast convergence of such a sDG MOSFET model, which is verified by the least square method results, Silvaco Atlas simulation results, and experimental data
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