Abstract
This paper presents a physically valid quasi-ballistic drain current model applicable for nanoscale symmetric Double Gate (SDG) MOSFETs. The proposed drain current model includes both diffusive and ballistic transport phenomena. The model considers the important positional carrier scattering dependency effect near the source region described in terms of transmission and reflection co-efficients related to the scattering theory. The significance of carrier transport near the bottleneck source region is illustrated where the carriers diffuse into the channel at a relatively lower velocity before accelerating ballistically. The results obtained demonstrate carrier scattering dependency at the critical layer defined near the low field source region on the drain current characteristics. The proposed model partly evolves from Natori’s ballistic bulk MOSFET model that is modified accordingly to be valid for a symmetric Double Gate MOSFET in the nanoscale regime. Carrier degeneracy and Fermi–Dirac statistics are included in the work so as to justify the complete physicality of the model. The model is further extended and is shown to be continuous in terms of terminal charges and capacitances in all regions of operation. A comparative analysis is also done between the proposed quasi-ballistic model and a hypothetical complete ballistic device.
Highlights
Multiple gate MOSFETs have emerged as the most promising contenders [1] amongst various generation semiconductor devices
A symmetric Double Gate (SDG) MOSFET is a variant of multigate MOSFETs, which is considered to be an ideal device that can be scaled beyond the bulk CMOS limit [2]
The positional carrier scattering dependency on the drain current near the low field source region is given by Diamond, Triangle and Square Symbols for critical layer width δ = 2 nm, 4 nm and 6 nm respectively
Summary
Multiple gate MOSFETs have emerged as the most promising contenders [1] amongst various generation semiconductor devices. The proposed drain current model considers positional carrier scattering dependency in a nanoscale SDG MOSFET and includes both drift–diffusion and ballistic transport physics.
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