Abstract
The breakdown voltage of a GaAs MESFET is generally specified by a two-terminal measurement, either with the source and drain grounded or with the source floating. To predict the breakdown voltage, the 2-D Poisson equation is solved analytically to obtain the field distribution. A model is proposed for the reverse gate current-voltage characteristics. Using this model the reverse gate-drain breakdown voltage is calculated with a defined gate current for different doping concentrations and active layer thicknesses.
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