Abstract
In this work, we model single photon avalanche diodes (SPADs) as communication channels. We apply classical Shannon results for a Gaussian channel to typical SPAD circuits. Thus we look at the information rate and the bit energy of the circuit. By considering the noise sources for a generic SPAD sensor we develop the information rate model as a function of the excess bias voltage and perimeter gate voltage. We find that when considering only the dark count rate that there is a single optimum excess bias voltage that gives the maximum information rate. We conclude there is an excess voltage, gate voltage pair that optimizes the information rate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
