Abstract
An improved field charge extraction (FCE) diode with a deep p+ adjusting region at the cathode side is studied. The reverse recovery mechanism and electric field gradient are thoroughly analyzed and validated using ISE simulation results. The results show that, based on the premise of ensuring the static characteristics, the improved FCE diode can clearly improve the softness and effectively suppress the peak electric field of the nn− junction at the cathode side during reverse recovery, and thus has a high dynamic avalanche capability compared with conventional FCE diodes.
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