Abstract
A model to describe the I-V characteristics of the tunnel emitter transistor (the TETRAN) is developed. It is based on a general model for tunneling in metal thin-insulator semiconductor structures. The model is used to compute typical magnitudes for the parameters appearing in the small-signal hybrid- pi equivalent circuit of this device. From these it is predicted that the cutoff frequency for realistic TETRANs based on Al/SiO/sub 2//n-Si structures is about 1 GHz. This is considerably less than the values recently predicted for a related device, the BICFET, which is similar to the TETRAN.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Published Version
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