Abstract
A number of different diode characteristics are observed in small-area silicon Schottky diodes under forward-biased and high-current-density conditions. These characteristics, such as positive resistance, negative resistance, and normal diode characteristics, are analyzed. The analysis demonstrates that the variations are due to the minority-carrier accumulation in the epitaxial region of the diodes, which is mainly controlled by Schottky barrier heights and the resistivity of the semiconductor epitaxial region. >
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
