An alternative mechanism of dry reforming enhanced growth of high-quality graphene: CO2-assisted CVD

Abstract

The Cu-CH4-CVD system is a common method for the preparation of large-area and high-quality graphene, but high preparation temperature is usually essential to provide the high energy required to obtain active carbon species, causing inevitable intrinsic pollution. Here, we demonstrated a new technique for the high-quality preparation of graphene and proposed a new nucleation growth mechanism of graphene on the experimental basis in combination with computational materials science. By introducing CO2 into the traditional CVD system, the problem of intrinsic pollution was solved while the graphene-shaping nuclear energy was reduced, and Gr films with few layers, large domain size and small defect density were prepared. Ultimately, the Schottky PD composed of the prepared Gr film and Ge film achieved 1550 nm photoelectric detection and showed good performance.