Abstract
Abstract A new alignment technique for x-ray lithography, projection linear Fresnel zone plate (LFZP) method, has been developed and applied to an x-ray stepper for synchrotron radiation lithography. A wafer alignment mark is magnified and projected using an LFZP on a mask. The wafer mark image position is measured very precisely by a scanning optical system. The alignment error between a mask and a wafer is detected with less than 0.01 μm resolution. Up to date, 0.1 μm (3σ) overlay accuracy has been achieved.
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