Abstract
This paper reports a novel HEMT structure that includes a built-in light emitter through band-to-band radiative recombination that is provided via holes from the p-GaN layer and electrons from the 2DEG. The electrical switching and illumination functions are able to be combined into a single device. The peak of the emitted light spectrum is located at 365 nm, corresponding to the bandgap of the GaN layer. This device uses a simple and cost-effective process, and shows the possibility for use in applications such as optical interconnects and optoelectronic integrated circuits.
Highlights
Gallium nitride (GaN)-based devices have been widely used in two types of applications: high electron mobility transistors (HEMTs) for electronics, and light emitting diodes (LEDs) for photonics
This is the first investigation into a light emitting device based on the recombination of electrons from two-dimensional electron gas (2DEG) and holes from the p-GaN layer, whereas, in previous work, electrons in conventional LED structures are supplied via an n+ layer
For the LightEmitting HEMT (LE-HEMT), an offset voltage of around 3 V is observed before the current is turned on, which is attributed to the built-in voltage between the p-GaN layer and the 2DEG
Summary
Gallium nitride (GaN)-based devices have been widely used in two types of applications: high electron mobility transistors (HEMTs) for electronics, and light emitting diodes (LEDs) for photonics. In contrast to previous approaches that have adopted the lateral integration of HEMTs and LEDs, the electrical switching and illumination functions in our structure are combined in a single device. This is the first investigation into a light emitting device based on the recombination of electrons from two-dimensional electron gas (2DEG) and holes from the p-GaN layer, whereas, in previous work, electrons in conventional LED structures are supplied via an n+ layer. CHANG et al.: AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTOR WITH BUILT-IN LIGHT EMITTER
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