Abstract
Aspects of the formulation of a highly sensitive cresol epoxy novolac-based chemically amplified negative resist (epoxy resist, EPR) and optimization of critical process parameters for high-resolution electron-beam lithography are reported. The bulk resist sensitivity (E80, dose for 80% thickness retention) is 0.9 μC cm−2 at 40 kV. The effect of postapply bake and postexposure bake on resist sensitivity, contrast, and resolution are investigated and optimized for lithography up to the 0.1 μm regime. The resist process is characterized by a good exposure dose latitude and relevant insensitivity to the variation of thermal processing conditions. Postexposure bake temperature variations in the 90–130 °C range cause minimal change in sensitivity but remarkable change in contrast. Due to this behavior the resist process is not described satisfactorily by the reaction kinetic models commonly used to characterize chemically amplified resists of different chemistry.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
