Abstract
A new nonlinear expression of Fermi-level variation with two-dimensional electron gas density in a high electron mobility has been proposed. It was found that our expression has a better fit with the numerical results. And, an analytical expression for ns in terms of the applied gate voltage is developed. Comparing with other previous approximations, the solutions of our expression has a better agreement with the exact numerical results over the entire range of interest. Besides, the solutions of our expression of ns versus VG are compared with the experimental data and shown to be in good agreement over a wide range of bias conditions.
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