Abstract
In this letter, an accurate method for extracting the critical fieldEcin short channel MOSFET's is presented. The principle of this method is based on the comparison between two models which give drain saturation voltage evolution against gate voltageVdsat(Vg)continuously. The results obtained by this technique have shown better agreement with measurements data and have allow in the same time to determine the validity domain of Sodini's law [1].
Highlights
The effect of velocity saturation on the electric characteristics in short channel MOSFET’s has been the subject of several recent studies [2,3]
In a previous paper [5], the present authors proposed a new model to characterise drain saturation voltage in short channel MOSFET’s based on measurements of the partial derivative of impact ionisation rate which has allowed to find Vdsat(Vg) characteristics continuously. According to this method and the analytical model of drain saturation voltage given by Sodini [1], a novel technique for determination of the critical field is presented
Drain saturation voltage is given by the following analytical expression: Vdsat(Vg)
Summary
The effect of velocity saturation on the electric characteristics in short channel MOSFET’s has been the subject of several recent studies [2,3]. In a previous paper [5], the present authors proposed a new model to characterise drain saturation voltage in short channel MOSFET’s. Based on measurements of the partial derivative of impact ionisation rate which has allowed to find Vdsat(Vg) characteristics continuously. According to this method and the analytical model of drain saturation voltage given by Sodini [1], a novel technique for determination of the critical field is presented
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