An accurate compact model for gallium nitride gate injection transistor for next generation of power electronics design

Abstract

A physics-based analytical and compact device model for an enhancement-mode gallium nitride gate injection transistor is presented in this work. The model is implemented in Saber® using MAST hardware description language (HDL). The physics-based model allows the user to extract the model parameters from the dc I-V and C-V characteristics that are readily available in the device datasheets. The classical drift-diffusion model of carrier transport is used to describe the lateral channel current resulting from a very large concentration of carriers at the AlGaN/GaN hetero-junction. The dynamic validation of the model has been demonstrated against the measured characteristics of a 600 V commercial Panasonic GaN transistor using a double-pulse test circuit. The simulated vs. measured device characteristics show satisfactory agreement and validate the model for future power electronics applications and design.