Abstract
A physics-based analytical compact device model for an enhancement-mode Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) lateral power device structure is presented. The model was implemented in the Saber® simulator and the physics-based model parameters are specifically crafted so that they can easily be extracted from dc I-V and C-V data typically available in a datasheet. An 80 V, 90 A (420 A, pulse rated), 2.5 mQ commercial EPC device datasheet is used as an example in this paper to demonstrate the parameter extraction procedure for the compact model. The model has been validated against the turn-on and turn-off characteristics of a commercial EPC GaN device. The model is scalable and can be used for a wide range of commercial GaN devices by using the extraction procedure detailed in this work.
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