Abstract
The present paper proposes an improved charge control model of lattice-mismatched AlGaN/GaN HEMTs, valid over the entire operating region. The model for estimation of two-dimensional electron gas (2-DEG) sheet carrier concentration accounts for the strongly dominant spontaneous and piezoelectric polarization at the AlGaN/GaN heterointerface. The dependence of 2-DEG sheet carrier concentration on the aluminum composition and AlGaN layer thickness has been investigated in detail. Current–voltage characteristics developed from the 2-DEG model include the effect of field dependent mobility, velocity saturation and parasitic source/drain resistances. Close proximity with experimental data confirms the validity of the proposed model.
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