An Accurate and Improved GaN HEMT Small Signal Parameter Extraction

Abstract

A highly proficient and precise algorithm is proposed for the small signal equivalent circuit parameters extraction of GaN HEMT devices. This technique incorporates direct deduction of both the intrinsic and extrinsic small signal parameters in a low frequency band. This technique is swift and goes up-to X band which fits the determined equivalent circuit very well into the S parameters. We use Cold FET and HOT FET techniques to obtain intrinsic and extrinsic parameters to demonstrate the impact of parasite element passivation, parasitic capacitances, resistances and inductances. We learn the magnitude of their effect on the efficiency of power and microwave from this stage. The validity of the suggested algorithm was carefully checked with an outstanding correlation between the parameters measured and modeled very well.