Abstract
The present analysis proposes a 2D analytical model of SGT/CGT MOSFET for potential distribution, short channel threshold voltage and current voltage characteristics. The model takes into account the effect of source/drain resistance, field-dependent mobility, velocity saturation and drain-induced barrier lowering (DIBL) effect. Advantages of SGT/CGT MOSFET over conventional planar structures are analyzed in detail and the results obtained are verified with simulated data.
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