An 800-MHz 8-bit high speed SAR ADC in 16nm FinFET process

Abstract

In this paper, we fabricated an 8-bit SAR ADC with a 16-nm FinFET process. A time-interleaved (TI-) ADC is remarked as an ADC with high speed sampling rate. Considering the area, the power consumption and the complexity of the mismatch calibration, it is possible that a unit SAR ADC of the TI-ADC with higher sampling rate improves these performances. We configure the SAR ADC with the high speed operation which is suitable for the advanced CMOS process and describe with the 16-nm FinFET process. Our SAR ADC achieves the 6.53 bits of ENOB with 800 MS/s. We compare other results with other process, and confirm that this SAR ADC can adapt to the advanced CMOS process.