Abstract
Atmel describes a new SiGe RF technology which includes three types of npn transistors on one wafer. The breakdown voltages are 7, 4 and 2.5V, corresponding to transit frequencies (f T) of 30, 50 and 80 GHz, respectively. f max exceeds 90 GHz. Three types of resistors, high-Q inductors and capacitors as well as ESD and Schottky diodes and LPNP are also available. In near future 0.25 μm CMOS will also be incorporated.
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