Abstract
A highly sensitive sense amplifier for static random access memory (SRAM) with a very low offset voltage, negligible static current, and low kickback noise is presented in this paper. We propose to use a preamplifier stage instead of positive feedback between the input and the sense amplifier to improve the sensitivity of the sense amplifier. The proposed sense amplifier is designed and simulated using 0.18 μm CMOS technology node. With a supply voltage of 1.4 V and an operating frequency of 1 GHz, the proposed sensing amplifier has a sensing delay of 193.2 ps, which is 85% better than conventional designs. The sense amplifier has an offset voltage of 18 mV.
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