Abstract

The letter investigates the influence of a thermionic-type injected current on the dynamic operating conditions and performance of GaAs impatt diodes. For this study, the computer program developed for high-efficiency impatt diodes has been used extensively. The work shows that interesting results can be obtained in X-band and that the practical realisation of such a device would be possible by using a transistor in which the transistor effect, avalanche effect and transit-time effect are used in combination.

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