Abstract
The results of studies of photoelectric injection amplification in the Al–Al2O3–p-CdTe–Mo structure at high bias voltages for the forward current are presented. It has been shown that the spectral sensitivity reaches its maximum value Sλ = 8.4∙104 A/W, when the diode is illuminated with the “own” light at λ = 450 nm and V = 7 V, while when it is illuminated with the “impurity” light at λ = 950 nm Sλ = 4.3∙104 A/W under the same bias voltage. It has been established that when illuminating the structure with the “own” light, the positive feedback mechanism is realized, and when illuminating with “impurity” light, the parametric amplification mechanism is realized.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Semiconductor Physics, Quantum Electronics and Optoelectronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
