Abstract
A successful attempt has been made in fabricating an amphoterically silicon-doped gallium arsenide laser which operates at room temperature. Silicon doped n and p layers were grown in one step using the liquid phase epitaxy method. The threshold current densities were 3400 and 58 700 A/cm2 at 77 and 300 °K, respectively. The best beam divergence observed was 11 ° at the half-power point. The heavily compensated p layer and long electron-diffusion length were overcome by use of a potential barrier.
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