Abstract
A successful attempt has been made in fabricating an amphoterically silicon-doped gallium arsenide laser which operates at room temperature. Silicon doped n and p layers were grown in one step using the liquid phase epitaxy method. The threshold current densities were 3400 and 58 700 A/cm2 at 77 and 300 °K, respectively. The best beam divergence observed was 11 ° at the half-power point. The heavily compensated p layer and long electron-diffusion length were overcome by use of a potential barrier.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.