Amorphous Zn predeposition for growth of low-defect-density CdTe films and low-optical-loss Cd 1− xMn xTe magneto-optic waveguide on GaAs substrate

Abstract

In order to reduce defect density in a CdTe film grown on GaAs, an amorphous Zn (a-Zn) layer was pre-deposited onto GaAs substrate. The a-Zn layer prevents a direct reaction of Te with Ga to form Ga 2Te 3, which induces defects. The thickness of a-Zn layer prior to the film growth can be reproducibly monitored from the intensity of reflection high-energy electron diffraction (RHEED) specular beam. Cd 1− x Mn x Te waveguide grown on this CdTe buffer layer showed significantly reduced optical loss down to 4 dB/cm.